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Silicon MOS FETs (Small Signal)
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
unit: mm
5.00.2
5.10.2
4.00.2
I Features
I Absolute Maximum Ratings (Ta = 25C)
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 80 20 0.5 1 750 150 -55 to +150 Unit V V A A mW C C
2.540.15 1.27 1.27 0.45 -0.1
+0.2
13.50.5
G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL
0.45 -0.1
+0.2
123
I Electrical Characteristics (Ta = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS Vth RDS(on)*1 | Yfs | Coss ton
*2
Conditions VDS = 60V, VGS = 0 VGS = 20V, VDS = 0 IDS = 100A, VGS = 0 ID = 1mA, VDS = VGS ID = 0.5A, VGS = 10V ID = 0.2A, VDS = 15V, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz
min
typ
2.30.2
1: Source 2: Drain 3: Gate JEDEC: TO-92 EIAJ: SC-43 TO-92 Type Package
max 10 0.1
Unit A A V V mS pF pF pF ns ns
80 1.5 2 300 45 30 8 15 20 3.5 4
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Turn-off time
*1 *2
toff*2
Pulse measurement ton, toff measurement circuit
Vout Vin = 10V 68 VDD = 30V Vout Vin 10% Vin 10% 90%
90% V
t = 1S f = 1MHZ
out
50
ton
toff
Note) The part number in the parenthesis shows conventional part number.
277
Silicon MOS FETs (Small Signal)
PD Ta
1200 1.2 Ta=25C 1.0 VGS=5.5V 1.0
2SK0614
ID VDS
1.2 VDS=10V Ta=25C
ID VGS
Allowable power dissipation PD (mW)
1000
Drain current ID (A)
800
0.8
5V
Drain current ID (A)
0.8
600
0.6
4.5V
0.6
400
0.4
4V
0.4
3.5V 200 0.2 3V 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 2 4 6 8 10 0.2
Ambient temperature Ta (C)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
| Yfs | VGS
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
600
Ciss, Coss, Crss VDS
VDS=15V f=1kHz Ta=25C VGS=0 f=1MHz Ta=25C
RDS(on) VGS
Drain to source ON-resistance RDS(on) ()
6 ID=500mA 5
120
Forward transfer admittance |Yfs| (mS)
500
100
400
80
4
300
60
3 Ta=75C 2 25C -25C
200
40
Ciss
100
20 Coss 0 1 3 10 30 Crss 100 300 1000
1
0 0 1 2 3 4 5 6
0 0 4 8 12 16 20
Gate to source voltage VGS (V)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
RDS(on) Ta
Drain to source ON-resistance RDS(on) ()
6 ID=500mA 5
4 VGS=5V
3
10V 2
1
0 -50
-25
0
25
50
75
Ambient temperature Ta (C)
278
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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